Method of manufacturing a non-volatile memory device

ABSTRACT

A method of manufacturing a non-volatile semiconductor memory device includes forming a sub-gate without an additional mask. A low word-line resistance is formed by a metal silicide layer on a main gate of the memory device. In operation, application of a voltage to the sub-gate forms a transient state inversion layer that serves as a bit-line, so that no implantation is required to form the bit-line.

TECHNICAL FIELD

This invention is related to the manufacture of memory devices. Moreimportantly, it is directed to a novel method of manufacturing anon-volatile memory device.

BACKGROUND

Non-volatile memory devices are extensively used for storinginformation. Unlike volatile memory, non-volatile memory is able toretain stored information in the absence of a constant power source.Examples of such devices include Read-only memory (ROM), programmableROM (PROM), erasable PROM (EPROM), electrically erasable programmableROM (EEPROM), and flash EEPROM, what is typically referred to as flashmemory.

Memory devices are generally composed of arrays of memory cells. A flashmemory cell offers the advantage that it may be erased in blocks of datainstead of one byte at a time. Each memory cell includes a MOS structurehaving a gate, a drain, a source and a channel defined between the drainand the source. The gate corresponds to a word line, and the drain orsource corresponds to a bit-line of the memory array. A conventionalflash memory cell generally includes a layer provided between the gateand the channel for trapping charge carriers. The charge-trapping layercan be a dielectric such as silicon nitride. The memory cell may beprogrammed by appropriately biasing the gate, the source, and the drainsuch that charge carriers (electrons or holes) are forced to tunnel orbe injected into the trapping layer, effectively trapping the carriers.Applying different biases to the gate, the drain, and the source willallow the memory cell to be read or erased.

As the need for storing more information increases, it becomes necessaryto manufacture more memory cells per device, while attempting to eitherkeep the device the same size, or to make it even smaller, requiringincreased scalability of memory cells. As the gate size is reduced, thechannel between the source and drain region becomes increasingly reducedsuch that a gradual shorting together of the diffusions of the sourceand drain may occur. This is known as the “short channel effect”, and itis limited by the total amount of thermal energy transferred to thewafer during the given elevated temperature and duration of themanufacturing process, known as the thermal budget. In order to preventthe short channel effect, it is desirable to reduce the thermal budget.Prior art methods of manufacturing non-volatile memory devices have beenlimited in their attempts to scale the size of memory cells because ofthis short channel effect.

FIG. 1 shows a conventional non-volatile read-only memory (NROM) cell100 representative of an array of memory cells. A dielectric stackconsisting of an oxide layer 108, a silicon nitride layer 110, and asecond oxide layer 112 is first formed on a p-type semiconductorsubstrate 102. The silicon nitride layer 110 acts as the charge trappinglayer, and the insulating oxide layers prevent the charge from escapingthe trapping layer in the absence of the appropriate biases. N-typediffusion regions 104, 106 are formed in semiconductor substrate 102using conventional implantation methods. Memory device 100 is an n-typeMOS transistor with diffusion regions 104, 106 respectively acting asthe source and drain thereof. A main gate 114 is formed on second oxidelayer 112 and is part of a word-line. By applying appropriate biasingvoltages to the main gate 114, source 104, and drain 106, electrons maytunnel into and out of silicon nitride layer 112, as a result of whichmemory cell 100 may be programmed, read or erased.

The conventional manufacturing method suffers from high word-lineresistance. Furthermore, the conventional manufacturing method is lessscalable, because the thermal budget associated with the manufacturingprocess creates short channel effects as the size of the memory cell isreduced.

SUMMARY

Consistent with the invention, there is provided a method ofmanufacturing a non-volatile memory device. The method comprisesproviding a substrate having a charge-trapping stack and a firstpolysilicon layer formed thereon; selectively patterning thecharge-trapping stack and the first polysilicon layer to form a gatestructure; forming an insulating layer and a second polysilicon layer onthe substrate; selectively patterning the second polysilicon layer toform a sub-gate structure; forming a third polysilicon layer over thegate structure and sub-gate structure; forming a metal silicide layerover the third polysilicon layer; and selectively patterning the metalsilicide, the first polysilicon layer, and the third polysilicon layerto form a main gate.

Also in accordance with the present invention, there is provided amethod of manufacturing a non-volatile memory device. The methodcomprises providing a substrate; forming a charge-trapping stack overthe substrate; forming a first gate layer over the charge-trappingstack; forming a nitride layer over the first gate layer; selectivelypatterning the charge-trapping stack, the first gate layer, and thenitride layer to form gate structures in a first direction such thatportions of the substrate are exposed; forming an insulation layersurrounding the gate structures and over the exposed substrate; forminga second gate layer over the insulation layer; selectively patterningthe second gate layer to form sub-gates; forming a hard mask layer overthe sub-gate; selectively removing the nitride layer of the gatestructure to expose the first gate layer; forming a third gate layerover the first gate layer and the hard mask layer; forming a metalsilicide layer over the third gate layer; and selectively patterning thethird gate layer and the metal silicide layer in a second directionperpendicular to the first direction.

Further in accordance with the present invention, there is provided amethod of manufacturing a non-volatile semiconductor memory device. Themethod comprises providing a substrate having a charge-trapping stackand a first polysilicon layer formed thereon; selectively patterningthrough the charge-trapping stack and the first polysilicon layer toexpose the substrate and form a gate structure; forming an insulatinglayer and a second polysilicon layer on the exposed substrate;selectively patterning the second polysilicon layer to form a sub-gatestructure; forming a hard mask on the sub-gate; and forming a thirdpolysilicon layer over the gate structure and hard mask, so thatapplication of a voltage to the sub-gate forms a transient stateinversion layer in the substrate.

Additionally in accordance with the present invention, there is providednon-volatile semiconductor device comprising a semiconductor substrate;a charge-trapping stack located over at least a first portion of thesemiconductor substrate; a sub-gate over at least a second portion ofthe semiconductor substrate; and a main gate over the charge-trappingstack, wherein the main gate comprises a metal silicide.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory onlyand are not restrictive of the invention, as claimed.

The accompanying drawings, which are incorporated in and constitute apart of this specification, illustrate one embodiment of the inventionand together with the description, serve to explain the principles ofthe invention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a conventional memory cell representative of an array ofmemory cells.

FIGS. 2A-2K illustrate a novel method of manufacturing a non-volatilememory device consistent with an embodiment of the present invention.

FIG. 3 shows a three-dimensional representation of a memory cell made bya method of manufacturing consistent with the present invention.

FIG. 4 shows the operation of a memory cell made by a method ofmanufacturing consistent with the present invention.

DESCRIPTION OF THE EMBODIMENTS

Reference will now be made in detail to the present embodimentsconsistent with the invention, examples of which are illustrated in theaccompanying drawings. Wherever possible, the same reference numberswill be used throughout the drawings to refer to the same or like parts.

FIGS. 2A-2J illustrate a novel method of manufacturing a non-volatilememory device consistent with the present invention. As shown in FIG.2A, a memory device 200 includes a charge-trapping stack, comprising afirst insulation layer 202, a charge-trapping layer 204, and a secondinsulation layer 206 formed on a semiconductor substrate 201. First andsecond insulation layers 202 and 206 may comprise silicon oxide layerseach having a thickness of about 5-15 nm. Charge-trapping layer 204 maycomprise a silicon nitride layer having a thickness of about 2-8 nm.Charge-trapping layer 204 may instead comprise a material with a highdielectric constant, known as a high-k material, with a dielectricconstant k larger than 4, and having a thickness of about 2-8 nm.Examples of suitable high-k materials include aluminum oxide and hafniumoxide. As another alternative, charge-trapping layer 204 may comprise atrilayer of silicon nitride/silicon dioxide/silicon nitride, whereineach layer of the trilayer has a thickness of about 2-8 nm. A firstpolysilicon layer 208 is formed over second insulation layer 206 bysuitable techniques. First polysilicon layer 208 can have a thickness of30-100 nm, and may further be doped with n-type impurities, p-typeimpurities, or not be doped at all. A silicon nitride layer 210 isformed on first polysilicon layer 208, and may have a thickness of about50-200 nm.

As shown in FIG. 2B, silicon nitride layer 210, first polysilicon layer208, first insulation layer 202, charge-trapping layer 204, and secondinsulation layer 206 are selectively patterned in a first direction, forexample, in a y-direction (perpendicular to the plane of the drawing ofFIG. 2B), using suitable techniques, including, for example,conventional dry etching methods to form a series of first patternedlines. In an embodiment consistent with the present invention, firstinsulation layer 202, charge-trapping layer 204, and second insulationlayer 206 comprise an oxide-nitride-oxide (ONO) stack, and thepatterning process patterns through the entire ONO dielectric stack 202,204, 206 and stops at substrate 201. Unlike conventional methods, thepatterning does not require the selectivity that is required to stop thepatterning at charge-trapping layer 204 and instead stops at substrate201, resulting in a less difficult and less costly process. Firstpolysilicon layer 208 is patterned to form bottom word-line gates 208 a.

As shown in FIG. 2C, an isolation liner 212 is formed over siliconnitride layer 210, substrate 201, and the sidewalls of first polysiliconlayer 208, insulation layers 202, 206, and charge-trapping layer 204,using any suitable means, such as low pressure chemical vapor deposition(LPCVD). According to one embodiment consistent with the presentinvention, isolation liner 212 may be an oxide deposited by LPCVD usingSiH₄ and N₂ at about 700-900° C. to have a thickness of about 5-40 nm.According to another embodiment consistent with the present inventionisolation liner 212 can be an oxide liner grown using dry oxidation, wetoxidation, or rapid thermal processing (RTP) oxidation at about750-1100° C.

FIG. 2D shows that a second polysilicon layer 214 is formed overisolation liner 212. Second polysilicon layer 214 fills in an interspacebetween the first patterned lines, and is between bottom word-line gates208 a. Second polysilicon layer 214 may have a thickness of about 80-300nm measured from the top of isolation liner 212, and can have n doping,p doping, or no doping at all. As shown in FIG. 2E, second polysiliconlayer 214 is then etched back to form a sub-gate 216 that includes thepolysilicon filled in between bottom word-line gates 208 a. A highover-etch of second polysilicon layer 214 is used to create a sub-gate216. The thickness of sub-gate 216 may range between about 50-200 nm.During this etch, isolation liner 212 is also removed from the top ofsilicon nitride layer 210.

According to another embodiment consistent with the present invention,sub-gate 216 can be formed by a chemical mechanical polishing (CMP)technique using the stop layer of, for example, isolation liner 212, orsilicon nitride layer 210. A high over-polish is needed to completelyremove second polysilicon layer 214 over the top of silicon nitridelayer 210.

As shown in FIG. 2F, in an embodiment consistent with the presentinvention, a plasma dielectric material 217 is filled in over thesub-gate 216. Plasma dielectric material 217 is further formed overisolation liner 212 to form a plasma dielectric 218 comprising plasmadielectric material 217 and isolation liner 212 for isolating betweensub-gate 216 and word-line bottom gate 208 a. Plasma dielectric material217 may comprise a high density plasma (HDP) oxide, and serves not onlyto provide additional isolation between sub-gate 216 and word-linebottom gate 208 a, but is also used, for example, as a hard mask oversub-gate 216 for future patterning.

As shown in FIG. 2G, consistent with another embodiment of the presentinvention, and as an alternative to the formation of plasma dielectric217, oxidation may be performed on sub-gate 216 to grow an oxide layer219 having a thickness of about 10-30 nm. Oxide layer 219 may also beused as a hard mask for sub-gate 216 in future patterning steps.

As shown in FIG. 2H, silicon nitride layer 210 is selectively removedusing suitable techniques. In an embodiment consistent with the presentinvention, wet chemical etching using hot phosphoric acid may be used toremove silicon nitride layer 210. Plasma dielectric 218 acts as a mask,preventing the removal of sub-gate 216.

Referring to FIG. 21, a third polysilicon layer 220 is deposited overword-line bottom gate 208 a and plasma dielectric 218 using suitabletechniques. Third polysilicon layer may have a thickness of about 30-100nm, and may have n doping, p doping, or no doping at all. A metalsilicide layer 222 is deposited over third polysilicon layer 220 usingsuitable techniques. Metal silicide layer 222 may have a thickness ofabout 50-200 nm, and may be provided as TiSi_(x), WSi_(x), CoSi_(x), orNiSi_(x), or any similar metal silicide. Metal silicide layer 222 andthird polysilicon layer 220 form main gates of the memory cell.

FIG. 2J is a cross-section of FIG. 21 along the line 2A-2A′. FIG. 2K isa cross section of FIG. 21 along the line 2B-2B′. As shown in FIGS. 2Jand 2K, metal silicide layer 222, third polysilicon layer 220, andword-line bottom gate 208 a are selectively patterned in a directionperpendicular to the first patterning direction, for example,perpendicular to the y-direction along which the series of firstpatterned lines were formed, as shown in FIG. 2B. The patterning isperformed by, for example, dry etching, using chemicals that have a highselectivity of polysilicon relative to oxide. In an embodimentconsistent with the present invention, HBr/O₂ is used as a dry etchantto obtain a high selectivity of polysilicon relative to oxide, and thedry etching is performed to selectively pattern metal silicide layer222, third polysilicon layer 220, and word-line bottom gate 208 a. Asshown in FIG. 2J, plasma dielectric 218 again acts as a mask in thepatterning process to protect the profile of sub-gate 216, thus maskingsub-gate 216 again without the need of an additional mask. As shown inFIG. 2K, the selective patterning forms word-lines in, for example, thex-direction that include metal silicide layer 222 and third polysiliconlayer 220.

FIG. 3 shows a three-dimensional representation of memory device 200made by a method of manufacturing consistent with the present invention.As shown in FIG. 3, metal silicide layer 222 and third polysilicon layer220 together form word-lines. As explained above with reference to FIGS.21 and 2K, unmasked portions of bottom word-line gate 208 a extending inthe y-direction are removed during the etching of metal silicide 222 andpolysilicon 220 to form word-lines. During the same etching, plasmadielectric 218 masks sub-gate 216 such that sub-gate 216 remains, as wasalso shown in FIG. 2J.

FIG. 4 shows the operation of a memory cell 200 consistent with anembodiment of the present invention. Substrate 201 may include diffusionregions 224 and 226, and a channel region 232. In one aspect, substrate201 is doped with n-type impurities, and diffusion regions 224 and 226are doped with p-type impurities. A main gate 234 comprises metalsilicide layer 222, third polysilicon layer 220, and word-line bottomgate 208 a. Conventional methods of manufacturing non-volatile memorydevices typically use an implantation region within the array of memorycells to form bit-lines. However, in an embodiment consistent with thepresent invention, the bit-line is formed by a voltage V, applied tosub-gate 216. Application of voltage V forms a transient state inversionlayer 228 or 230 in semiconductor substrate 201 when programming,erasing, or reading the memory cells in an array. Transient stateinversion layer 228 or 230 and main gate structure 234 constitute ap-type MOS transistor, where transient state inversion layers 228 and230 are the source and drain thereof. Moreover, in an embodimentconsistent with the present invention, the application of a voltage V tosub-gate 216 will form transient state inversion layers 228 or 230 thatfurther serve as transient bit-lines. Due to the integration of thetransient bit-line and the source/drain region in inversion layer 228 or230, the programming, erasing, and reading voltages can be appliedthrough the transient bit-line. When voltage V is no longer applied tosub-gate 216, inversion layer 228 or 230 is not present, and thetransient bit-line disappears. Thus, unlike traditional implantedbit-lines, in accordance with embodiments consistent with the presentinvention a bit-line is only present in the memory array when aprogramming, erasing or reading operation is being performed.

Further, in memory device 200, the addition of metal silicide layer 222on the main gate/word-line effectively reduces the word-line resistance,allowing many memory cells to be closely spaced to form a high densitymemory array. Moreover, providing the capability to apply a voltage V tosub-gate 216 to form a transient state inversion layer 228 or 230bit-line during the programming, reading, or erasing of the deviceeliminates the need for implanting a bit-line and reduces the thermalbudget associated with conventional manufacturing methods. By using theinversion bit-line technique, non-volatile memory devices manufacturedconsistent with an embodiment of the present invention are better ableto avoid short channel effects due to the absence of a channelpunchthrough as the size of the memory cell is scaled. The improvedscalability of a non-volatile memory manufactured consistent with anembodiment of the present invention allows for more memory cells to beplaced in an array, and more arrays to be placed in a memory device.

Other embodiments of the invention will be apparent to those skilled inthe art from consideration of the specification and practice of theinvention disclosed herein. It is intended that the specification andexamples be considered as exemplary only, with a true scope and spiritof the invention being indicated by the following claims.

1. A method of manufacturing a non-volatile semiconductor memory device,comprising: providing a substrate having a charge-trapping stack and afirst polysilicon layer formed thereon; selectively patterning throughthe charge-trapping stack and the first polysilicon layer to expose thesubstrate and form a gate structure; forming an insulating layer and asecond polysilicon layer on the exposed substrate; selectivelypatterning the second polysilicon layer to form a sub-gate structure;forming a third polysilicon layer over the gate structure and sub-gatestructure; forming a metal silicide layer over the third polysiliconlayer; and selectively patterning the metal silicide, the firstpolysilicon layer, and the third polysilicon layer to form word-lines.2. The method according to claim 1, further including forming each ofthe first, second, and third polysilicon layers with at least one ofn-doping, p-doping, or no doping.
 3. The method according to claim 1,further including providing the charge-trapping stack to comprise afirst silicon oxide layer, a silicon nitride layer, and a second siliconoxide layer.
 4. The method according to claim 1, further includingproviding the charge-trapping stack to comprise a first silicon oxidelayer, a high-k material layer, and a second silicon oxide layer.
 5. Themethod according to claim 4, further including providing the high-kmaterial to have a dielectric constant greater than
 4. 6. The methodaccording to claim 4, further including providing the high-k material tobe aluminum oxide or hafnium dioxide.
 7. The method according to claim1, further including providing the charge-trapping stack to comprise amultilayer structure comprising a first silicon oxide layer, a siliconnitride layer, a second silicon oxide layer, a second silicon nitridelayer, and a third silicon oxide layer.
 8. The method according to claim1, further comprising: forming a hard mask over the sub-gate.
 9. Themethod according to claim 7, further including providing the hard maskto comprise a plasma oxide.
 10. The method according to claim 7, furtherincluding providing the hard mask to comprise an oxide layer grown onthe sub-gate.
 11. The method according to claim 1, further includingpatterning the charge-trapping stack and the first polysilicon layer ina first direction; and patterning the metal silicide, the firstpolysilicon layer, and the third polysilicon layer in a seconddirection, wherein the second direction is perpendicular to the firstdirection.
 12. The method according to claim 10, further includingforming the word-line perpendicular to the sub-gate.
 13. A method ofmanufacturing a non-volatile memory device, comprising: providing asubstrate; forming a charge-trapping stack over the substrate; forming afirst gate layer over the charge-trapping stack; forming a nitride layerover the first gate layer; selectively patterning the charge-trappingstack, the first gate layer, and the nitride layer to form gatestructures in a first direction such that portions of the substrate areexposed; forming an insulation layer surrounding the gate structures andover the exposed substrate; forming a second gate layer over theinsulation layer; selectively patterning the second gate layer to formsub-gates; forming a hard mask layer over the sub-gate; selectivelyremoving the nitride layer of the gate structure to expose the firstgate layer; forming a third gate layer over the first gate layer and thehard mask layer; forming a metal silicide layer over the third gatelayer; and selectively patterning the third gate layer and the metalsilicide layer in a second direction perpendicular to the firstdirection.
 14. The method according to claim 13, further includingproviding the charge-trapping stack to comprise a first silicon oxidelayer, a silicon nitride layer, and a second silicon oxide layer. 15.The method according to claim 13, further including providing thecharge-trapping stack to comprise a first silicon oxide layer, a high-kmaterial layer, and a second silicon oxide layer.
 16. The methodaccording to claim 15, further including providing the high-k materialto have a dielectric constant greater than
 4. 17. The method accordingto claim 15, further including providing the high-k material to bealuminum oxide or hafnium dioxide.
 18. The method according to claim 13,further including providing the charge-trapping stack to comprise amultilayer structure comprising a first silicon oxide layer, a siliconnitride layer, a second silicon oxide layer, a second silicon nitridelayer, and a third silicon oxide layer.
 19. The method according toclaim 13, further including providing the first and third gate layers tocomprise polysilicon layers having a thickness of about 30-100 nm; andproviding the second gate layer to comprise a polysilicon layer having athickness of about 80-300 nm.
 20. The method according to claim 13,further including providing the hard mask layer to comprise a plasmaoxide.
 21. The method according to claim 13, further including providingthe hard mask layer to comprise an oxide layer grown on the sub-gate.22. The method according to claim 13, further including providing theinsulation layer to comprise a deposited oxide liner.
 23. The methodaccording to claim 22, further including forming the deposited oxideliner using low pressure chemical vapor deposition.
 24. The methodaccording to claim 13, further including providing the insulation linerto comprise an oxide liner grown by dry oxidation, wet oxidation, orrapid thermal processing oxidation.
 25. The method according to claim13, further including selectively patterning the third gate layer andthe metal silicide layer to form word-lines in the second direction. 26.The method according to claim 25, further including forming theword-line perpendicular to the sub-gate.
 27. A method of manufacturing anon-volatile semiconductor memory device, comprising: providing asubstrate having a charge-trapping stack and a first polysilicon layerformed thereon; selectively patterning through the charge-trapping stackand the first polysilicon layer to expose the substrate and form a gatestructure; forming an insulating layer and a second polysilicon layer onthe exposed substrate; selectively patterning the second polysiliconlayer to form a sub-gate structure; forming a hard mask on the sub-gate;and forming a third polysilicon layer over the gate structure and hardmask, so that application of a voltage to the sub-gate forms a transientstate inversion layer in the substrate.
 28. The method according toclaim 27, further including providing the formed transient stateinversion layer to be a bit-line of the non-volatile semiconductormemory device.
 29. The method according to claim 27, further includingproviding the formed transient state inversion layer to be a source ordrain of a transistor of the non-volatile semiconductor memory device.30. The method according to claim 27, further including providing theformed transient state inversion layer to be only present duringapplication of the voltage to the sub-gate.
 31. The method according toclaim 27, further including forming the first, second, and thirdpolysilicon layers with at least one of n-doping, p-doping, or nodoping.
 32. The method according to claim 27, further includingproviding the charge-trapping stack to comprise a stack comprising afirst oxide layer, a nitride layer, and a second oxide layer.
 33. Themethod according to claim 27, further comprising: forming a metalsilicide layer over the third polysilicon layer; and selectivelypatterning the metal silicide layer, the first polysilicon layer, andthe third polysilicon layer to form word-lines.
 34. The method accordingto claim 27, further including providing the hard mask to comprise aplasma oxide.
 35. The method according to claim 27, further includingproviding the hard mask to comprise an oxide layer grown on thesub-gate.
 36. The method according to claim 27, further includingpatterning the charge-trapping stack and the first polysilicon layer ina first direction; and patterning the metal silicide, the firstpolysilicon layer, and the third polysilicon layer in a seconddirection, wherein the second direction is perpendicular to the firstdirection.
 37. The method according to claim 36, further includingforming the word-line perpendicular to the sub-gate.
 38. A non-volatilesemiconductor device, comprising: a semiconductor substrate; acharge-trapping stack located over at least a first portion of thesemiconductor substrate; a sub-gate over at least a second portion ofthe semiconductor substrate; and a main gate over the charge-trappingstack, wherein the main gate comprises a metal silicide.
 39. The deviceaccording to claim 38, wherein the charge-trapping stack comprises: afirst oxide over a portion of the semiconductor substrate; a nitrideover the first oxide; and a second oxide over the nitride.
 40. Thedevice according to claim 38, wherein the charge-trapping stackcomprises: a first oxide over a portion of the semiconductor substrate;a first nitride over the first oxide; a second oxide over the firstnitride; a second nitride over the second oxide; and a third oxide overthe second nitride.
 41. The device according to claim 38, wherein thecharge-trapping stack comprises: a first oxide over a portion of thesemiconductor substrate; a high-k material over the first oxide; and asecond oxide over the high-k material.
 42. The device according to claim41, wherein the high-k material has a dielectric constant greater than4.
 43. the device according to claim 41, wherein the high-k materialcomprises aluminum oxide or hafnium dioxide.
 44. The device according toclaim 38, further comprising: a hard mask over the sub-gate, so thatapplication of a voltage to the sub-gate will form a transient stateinversion layer.
 45. The device according to claim 44, wherein theformed transient state inversion layer is the bit-line of thenon-volatile semiconductor memory device.
 46. The device according toclaim 44, wherein the formed transient state inversion layer is thesource or drain of a transistor of the non-volatile semiconductor memorydevice.
 47. The device according to claim 44, wherein the formedtransient state inversion layer is only present during application ofthe voltage to the sub-gate.
 48. The device according to claim 44,wherein the hard mask comprises a plasma oxide.
 49. The device accordingto claim 38, further comprising: a transient inversion layer in thesecond portion of the substrate when a voltage is applied to thesub-gate.
 50. The device according to claim 38, further comprising: aninsulation layer between the sub-gate and the main gate.
 51. The deviceaccording to claim 38, wherein the insulation layer comprises an oxideliner.
 52. The device according to claim 38, wherein the main gate formsa portion of a word-line.
 53. The device according to claim 52, whereinthe word-line further comprises: a polysilicon bottom word-line gate;and a main gate word-line comprising a metal silicide, a polysilicon, ora combination thereof.
 54. The device according to claim 38, wherein thecharge-trapping stack comprises: a first insulating layer over a portionof the semiconductor substrate; a charge-trapping layer over the firstinsulating layer; and a second insulating layer over the charge-trappinglayer.